Patent Number: 8,816,473

Title: Planar polysilicon regions for precision resistors and electrical fuses and method of fabrication

Abstract: A semiconductor structure providing a precision resistive element and method of fabrication is disclosed. Polysilicon is embedded in a silicon substrate. The polysilicon may be doped to control the resistance. Embodiments may include resistors, eFuses, and silicon-on-insulator structures. Some embodiments may include non-rectangular cross sections.

Inventors: Kumar; Arvind (Hopewell Junction, NY), Chou; Anthony I-Chih (Hopewell Junction, NY), Mo; Renee T. (Hopewell Junction, NY), Narasimha; Shreesh (Hopewell Junction, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 29/86 (20060101); H01L 21/02 (20060101)

Expiration Date: 8/26/12018