Patent Number: 8,816,475

Title: Semiconductor devices including capacitors and methods of manufacturing the same

Abstract: Semiconductor devices having capacitors are provided. The semiconductor device includes spiral storage nodes disposed on a semiconductor substrate to vertically extend along spiral lines, a dielectric layer on the spiral storage nodes, and a plate node formed on the dielectric layer of the spiral storage nodes.

Inventors: Jin; Hyung Ju (Icheon-si, KR)

Assignee: SK Hynix Inc.

International Classification: H01L 21/02 (20060101)

Expiration Date: 8/26/12018