Patent Number: 8,817,358

Title: Thin film stack with surface-conditioning buffer layers and related methods

Abstract: This disclosure provides systems, methods and apparatus for a thin film stack with surface-conditioning buffer layers. In one aspect, the thin film stack includes a plurality of thin film layers each having a thickness greater than about 10 nm and a plurality of surface-conditioning buffer layers each having a thickness between about 1 nm and about 10 nm. The surface-conditioning buffer layers are alternatingly disposed between the thin film layers. Each of the surface-conditioning buffer layers are formed with the same or substantially the same thickness and composition. In some implementations, the surface-conditioning buffer layers are formed by atomic layer deposition.

Inventors: Hong; John Hyunchul (San Clemente, CA), Reines; Isak Clark (San Diego, CA), Lee; Chong Uk (San Diego, CA), Chang; Tallis Young (San Diego, CA), Pan; Yaoling (San Diego, CA), Chan; Edward Keat Leem (San Diego, CA)

Assignee: QUALCOMM MEMS Technologies, Inc.

International Classification: G02B 26/00 (20060101); G02F 1/03 (20060101)

Expiration Date: 8/26/12018