Patent Number: 8,821,740

Title: Nanowire manufacturing method

Abstract: Provided is a nanowire manufacturing method, comprising forming a plurality of grid patterns on a substrate, forming a nanowire on the grid patterns, and separating the grid pattern and the nanowire. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production.

Inventors: Lee; Young Jae (Seoul, KR), Yoo; Kyoung Jong (Seoul, KR), Lee; Jun (Seoul, KR), Kim; Jin Su (Seoul, KR), Park; Jae Wan (Seoul, KR)

Assignee: LG Innotek Co., Ltd.

International Classification: B44C 1/22 (20060101); C03C 15/00 (20060101); C03C 25/68 (20060101); C23F 1/00 (20060101)

Expiration Date: 9/02/12018