Patent Number: 8,821,964

Title: Method for manufacture of semiconductor bearing thin film material

Abstract: A method for forming a semiconductor bearing thin film material. The method includes providing a metal precursor and a chalcogene precursor. The method forms a mixture of material comprising the metal precursor, the chalcogene precursor and a solvent material. The mixture of material is deposited overlying a surface region of a substrate member. In a specific embodiment, the method maintains the substrate member including the mixture of material in an inert environment and subjects the mixture of material to a first thermal process to cause a reaction between the metal precursor and the chalcogene material to form a semiconductor metal chalcogenide bearing material overlying the substrate member. The method then performs a second thermal process to remove any residual solvent and forms a substantially pure semiconductor metal chalcogenide thin film material overlying the substrate member.

Inventors: Huang; Jinman (Fremont, CA), Lee; Howard W. H. (Saratoga, CA)

Assignee: Stion Corporation

International Classification: B05D 5/12 (20060101)

Expiration Date: 9/02/12018