Patent Number: 8,821,986

Title: Activated silicon precursors for low temperature deposition

Abstract: Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.

Inventors: Weidman; Timothy W. (Sunnyvale, CA), Schroeder; Todd (Toledo, OH), Thompson; David (San Jose, CA), Anthis; Jeffrey W. (San Jose, CA)

Assignee: Applied Materials, Inc.

International Classification: C23C 16/50 (20060101); C23C 16/34 (20060101)

Expiration Date: 9/02/12018