Patent Number: 8,822,243

Title: Light emitting devices having light coupling layers with recessed electrodes

Abstract: A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling structure is disposed adjacent to the first layer. An orifice formed in the light coupling structure extends to the first layer. An electrode formed in the orifice is in electrical communication with the first layer.

Inventors: Yan; Li (Pleasanton, CA), Lin; Chao-kun (San Jose, CA), Chuang; Chih-Wei (Albany, CA)

Assignee: Manutius IP Inc.

International Classification: H01L 29/06 (20060101)

Expiration Date: 9/02/12018