Patent Number: 8,822,295

Title: Low extension dose implants in SRAM fabrication

Abstract: A static random access memory fabrication method includes forming a gate stack on a substrate, forming isolating spacers adjacent the gate stack, the isolating spacers and gate stack having a gate length, forming a source and drain region adjacent the gate stack, which generates an effective gate length, wherein the source and drain regions are formed from a low extension dose implant that varies a difference between the gate length and the effective gate length.

Inventors: Chang; Leland (New York, NY), Lin; Chung-Hsun (White Plains, NY), Lo; Shih-Hsien (Mount Kisco, NY), Sleight; Jeffrey W. (Ridgefield, CT)

Assignee: International Business Machines Corporation

International Classification: H01L 29/78 (20060101)

Expiration Date: 9/02/12018