Patent Number: 8,822,335

Title: Semiconductor device with air gap and method for fabricating the same

Abstract: A method for fabricating a semiconductor device includes forming a semiconductor structure having an open portion over a substrate, forming a sacrificial spacer on sidewalls of the open portion, forming a recessed first plug in the open portion, forming an air gap by removing the sacrificial spacer, forming a capping layer to expose the top surface of the recessed first plug and to cap the air gap, forming a protective layer over the capping layer and the recessed first plug, forming an ohmic contact layer over the protective layer, and forming a second plug over the ohmic contact layer.

Inventors: Lee; Nam-Yeal (Gyeonggi-do, KR), Yeom; Seung-Jin (Gyeonggi-do, KR), Lim; Sung-Won (Gyeonggi-do, KR), Hong; Seung-Hee (Gyeonggi-do, KR), Lee; Hyo-Seok (Gyeonggi-do, KR)

Assignee: SK Hynix Inc.

International Classification: H01L 21/44 (20060101)

Expiration Date: 9/02/12018