Patent Number: 8,822,816

Title: Niobium thin film stress relieving layer for thin-film solar cells

Abstract: A method of forming a photovoltaic device includes forming a thermal stress relieving layer on top of a substrate and forming a sacrificial back electrode metal layer on the thermal stress relieving layer. A semiconductor photon absorber layer is formed on the sacrificial back electrode metal layer, and the absorber layer is reacted with substantially an entire thickness of the sacrificial back electrode metal layer, thereby forming a back ohmic contact comprising a metallic compound of the sacrificial back electrode metal layer and the absorber layer, in combination with the thermal stress relieving layer.

Inventors: Cao; Qing (Yorktown Heights, NY), Li; Zhengwen (Danbury, CT), Liu; Fei (Yorktown Heights, NY), Zhang; Zhen (Ossining, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 31/0264 (20060101); H01L 31/18 (20060101)

Expiration Date: 9/02/12018