Patent Number: 8,822,966

Title: Nonvolatile memory device

Abstract: A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.

Inventors: Takahashi; Kensuke (Kanagawa, JP), Baba; Masanobu (Kanagawa, JP), Arayashiki; Yusuke (Kanagawa, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 29/00 (20060101)

Expiration Date: 9/02/12018