Patent Number: 8,823,013

Title: Second Schottky contact metal layer to improve GaN schottky diode performance

Abstract: A Schottky contact is disposed atop the surface of the semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and joins the first Schottky contact metal layer. A first. Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.

Inventors: Zhu; Ting Gang (Somerset, NJ), Pabisz; Marek (Quakertown, PA)

Assignee: Power Integrations, Inc.

International Classification: H01L 29/15 (20060101)

Expiration Date: 9/02/12018