Patent Number: 8,823,020

Title: Light emitting diode

Abstract: An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence. The connecting layer is etchable by alkaline solution. A bottom surface of the second n-type GaN layer faces towards the connecting layer and has a roughened exposed portion. The GaN on the bottom surface of the second n-type GaN layer has an N-face polarity. A blind hole extends through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to expose the connecting layer. An annular rough portion is formed on the bottom surface of the second n-type GaN layer and surrounds each blind hole.

Inventors: Hung; Tzu-Chien (Hsinchu, TW), Shen; Chia-Hui (Hsinchu, TW)

Assignee: Advanced Optoelectronic Technology, Inc.

International Classification: H01L 33/00 (20100101)

Expiration Date: 9/02/12018