Patent Number: 8,823,063

Title: SOI substrate, method for manufacturing the same, and semiconductor device

Abstract: An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700.degree. C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.

Inventors: Ohnuma; Hideto (Atsugi, JP), Kakehata; Tetsuya (Isehara, JP), Iikubo; Yoichi (Isehara, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 29/772 (20060101); H01L 29/04 (20060101)

Expiration Date: 9/02/12018