Patent Number: 8,823,086

Title: Semiconductor device and method of manufacturing the same

Abstract: A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts.

Inventors: Cho; Chul Hwan (Cheongju, KR)

Assignee: Hynix Semiconductor Inc.

International Classification: H01L 29/66 (20060101)

Expiration Date: 9/02/12018