Patent Number: 8,823,091

Title: Semiconductor device having saddle fin transistor and manufacturing method of the same

Abstract: The present invention discloses a transistor having the saddle fin structure. The saddle fin transistor of the present invention has a structure in which a landing plug contact region, particularly, a landing plug contact region on an isolation layer is elevated such that the landing plug contact SAC (Self Aligned Contact) fail can be prevented.

Inventors: Kim; Kyu tae (Seoul, KR)

Assignee: SK Hynix Inc.

International Classification: H01L 29/66 (20060101); H01L 27/088 (20060101); H01L 21/338 (20060101); H01L 21/336 (20060101)

Expiration Date: 9/02/12018