Patent Number: 8,823,097

Title: Protection device with a thin-film resistance connected to plural drain regions

Abstract: A transistor-type protection device includes: a semiconductor substrate; a well of a first-conductivity-type formed in the semiconductor substrate; a source region of a second-conductivity-type formed in the well; a gate electrode formed on the well via a gate insulating film at one side of the source region; plural drain regions of a second-conductivity-type formed apart from each other and respectively separated at a predetermined distance from a well part immediately below the gate electrode film; and a resistive connection part connecting between the plural drain regions with a predetermined electric resistance.

Inventors: Imoto; Tsutomu (Kanagawa, JP), Kobayashi; Toshio (Kanagawa, JP)

Assignee: Sony Corporation

International Classification: H01L 27/06 (20060101)

Expiration Date: 9/02/12018