Patent Number: 8,823,123

Title: Solid-state image sensor

Abstract: According to one embodiment, there is provided a solid-state image sensor including a photoelectric conversion layer, and a multilayer interference filter. The multilayer interference filter is arranged to conduct light of a particular color, of incident light, selectively to the photoelectric conversion layer. The multilayer interference filter has a laminate structure in which a first layer having a first refraction index and a second layer having a second refraction index are repeatedly laminated, and a third layer which is in contact with a lower surface of the laminate structure and has a third refraction index. A lowermost layer of the laminate structure is the second layer. The third refraction index is not equal to the first refraction index and is higher than the second refraction index.

Inventors: Kokubun; Koichi (Kanagawa, JP), Konno; Yusaku (Kanagawa, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 31/0232 (20140101); H01L 21/00 (20060101)

Expiration Date: 9/02/12018