Patent Number: 8,823,141

Title: Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device

Abstract: The semiconductor wafer includes: a base wafer; and an inhibition layer that is disposed on the base wafer as one piece or to be separate portions from each other, and inhibits growth of a crystal of a compound semiconductor, where the inhibition layer has a plurality of first opening regions that have a plurality of openings penetrating the inhibition layer and leading to the base wafer, each of the plurality of first opening regions includes therein a plurality of first openings disposed in the same arrangement, some of the plurality of first openings are first element forming openings each provided with a first compound semiconductor on which an electronic element is to be formed, and the other of the plurality of first openings are first dummy openings in which no electronic element is to be formed.

Inventors: Takada; Tomoyuki (Tsukuba, JP), Hata; Masahiko (Tsuchiura, JP), Yamanaka; Sadanori (Tsukuba, JP)

Assignee: Sumitomo Chemical Company, Limited

International Classification: H01L 29/20 (20060101); H01L 21/02 (20060101)

Expiration Date: 9/02/12018