Patent Number: 8,823,143

Title: Electrodeposition method for forming Ge on semiconductor substrates

Abstract: Methods for electrodepositing germanium on various semiconductor substrates such as Si, Ge, SiGe, and GaAs are provided. The electrodeposited germanium can be formed as a blanket or patterned film, and may be crystallized by solid phase epitaxy to the orientation of the underlying semiconductor substrate by subsequent annealing. These plated germanium layers may be used as the channel regions of high-mobility channel field effect transistors (FETs) in complementary metal oxide semiconductor (CMOS) circuits.

Inventors: Bedell; Stephen W. (Wappingers Falls, NY), Deligianni; Hariklia (Tenafly, NJ), Huang; Qiang (Sleepy Hollow, NY), Romankiw; Lubomyr T. (Briarcliff Manor, NY), Sadana; Devendra K. (Pleasantville, NY), Saenger; Katherine L. (Ossining, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/02 (20060101)

Expiration Date: 9/02/12018