Patent Number: 8,824,195

Title: Methods of forming phase-change memory devices and devices so formed

Abstract: Phase-change memory devices are provided. A phase-change memory device may include a substrate and a conductive region on the substrate. Moreover, the phase-change memory device may include a lower electrode on the conductive region. The lower electrode may include a metal silicide layer on the conductive region, and a metal silicon nitride layer including a resistivity of about 10 to about 100 times that of the metal silicide layer. Moreover, the lower electrode may include a metal oxide layer between the metal silicon nitride layer and the metal silicide layer. The metal oxide layer may include a resistivity that is greater than that of the metal silicide layer and less than the resistivity of the metal silicon nitride layer. The phase-change memory device may also include a phase-change layer and an upper electrode on the lower electrode.

Inventors: Hwang; Youngnam (Hwaseong-si, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: G11C 11/00 (20060101)

Expiration Date: 9/02/12018