Patent Number: 8,871,107

Title: Subtractive plasma etching of a blanket layer of metal or metal alloy

Abstract: A method of forming at least one metal or metal alloy feature in an integrated circuit is provided. In one embodiment, the method includes providing a material stack including at least an etch mask located on a blanker layer of metal or metal alloy. Exposed portions of the blanket layer of metal or metal alloy that are not protected by the etch mask are removed utilizing an etch comprising a plasma that forms a polymeric compound and/or complex which protects a portion of the blanket layer of metal or metal alloy located directly beneath the etch mask during the etch.

Inventors: Fuller; Nicholas C. M. (North Hills, NY), Joseph; Eric A. (White Plains, NY), Miyazoe; Hiroyuki (White Plains, NY), Hoinkis; Mark (Fishkill, NY), Yan; Chun (San Jose, CA)

Assignee: International Business Machines Corporation

International Classification: C03C 15/00 (20060101); C23F 1/00 (20060101); C23F 3/00 (20060101); C03C 25/68 (20060101); H01L 21/44 (20060101); H01L 21/461 (20060101); H01L 21/302 (20060101)

Expiration Date: 2018-10-28 0:00:00