Patent Number: 8,871,141

Title: Process for preparing a silicon carbide part without the need for any sintering additives

Abstract: The invention relates to a process for preparation of a part comprising silicon carbide with an average nanometric grain size and a relative density of more than 97%, said process comprising: a preform formation step by cold compaction of a nanometric silicon carbide powder or the formation of agglomerates of such a powder by granulation of the powder; a spark plasma sintering step of said preform or said agglomerates, without the addition of sintering, at at least one predetermined temperature and pressure so as to obtain the required relative density and average grain size, namely a relative density of more than 97% and a nanometric average grain size.

Inventors: Reau; Adrien (Palaiseau, FR), Tenegal; Francois (Paris, FR), Galy; Jean (Arcachon, FR)

Assignee: Commissariat a l'Energie Atomique et aux energies alternatives

International Classification: C04B 35/575 (20060101)

Expiration Date: 2018-10-28 0:00:00