Patent Number: 8,871,350

Title: Gas barrier film, electronic device including the same, gas barrier bag, and method for producing gas barrier film

Abstract: A gas barrier film in which a gas barrier layer deposited by catalyst CVD in contact with each of both main surfaces of a plastic film is an SiCNFH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07, 0.04<I(NH)/I(SiN)<0.08, and 0.05<I(CF)/I(SiN)<0.3; an SiOCNH layer satisfying conditions of 0.1<I(SiH)/I(NH)<0.9, 0.0<I(CH)/I(NH)<0.3, 8<I(SiN)/I(NH)<20, and 2<I(SiO.sub.2)/I(NH)<8; or an SiCNH layer satisfying conditions of 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07 and 0.04<I(NH)/I(SiN)<0.08. Here, the "I" represents peak intensity of Fourier transform infrared spectroscopy related to an atomic bond shown in the parentheses after the "I".

Inventors: Nakayama; Hiroshi (Osaka, JP)

Assignee: Material Design Factory Co., Ltd.

International Classification: B32B 9/04 (20060101); B29D 22/00 (20060101)

Expiration Date: 2018-10-28 0:00:00