Patent Number: 8,871,364

Title: Perovskite manganese oxide thin film

Abstract: An article including a perovskite manganese oxide thin film is composed of a substrate; and a perovskite manganese oxide thin film formed on the substrate and having an orientation that is an (m10) orientation where 19.gtoreq.m.gtoreq.2. When m is 2 the perovskite manganese oxide thin film has a (210) orientation. The invention provides a perovskite manganese oxide thin film having a transition temperature at room temperature or above, which is higher than that of the bulk oxide, by exploiting the substrate strain and the symmetry of the crystal lattice.

Inventors: Ogimoto; Yasushi (Higashiyamoto, JP)

Assignee: Fuji Electric Co., Ltd.

International Classification: H01F 1/01 (20060101); G02B 1/10 (20060101)

Expiration Date: 2018-10-28 0:00:00