Patent Number: 8,871,408

Title: Mask pattern creation method, recording medium, and semiconductor device manufacturing method

Abstract: According to one embodiment, a mask pattern creation method includes extracting an area, in which a DSA material is directed self-assembled to form a DSA pattern, from a design pattern area based on a design pattern and information on the DSA material. The method also includes creating a guide pattern that causes the DSA pattern to be formed in the area based on the design pattern, the information on the DSA material, the area, and a design constraint when forming the guide pattern. The method further includes creating a mask pattern of the guide pattern using the guide pattern.

Inventors: Takekawa; Yoko (Tokyo, JP), Asano; Masafumi (Kanagawa, JP), Zhang; Yingkang (Kanagawa, JP), Takahata; Kazuhiro (Kanagawa, JP), Ojima; Tomoko (Tokyo, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: G03F 1/68 (20120101)

Expiration Date: 2018-10-28 0:00:00