Patent Number: 8,871,555

Title: Photoelectric conversion device and manufacturing method thereof

Abstract: A photoelectric conversion device having a new anti-reflection structure is provided. A photoelectric conversion device includes a first-conductivity-type crystalline semiconductor region that is provided over a conductive layer; a crystalline semiconductor region that is provided over the first-conductivity-type crystalline semiconductor region and has an uneven surface by including a plurality of whiskers including a crystalline semiconductor; and a second-conductivity-type crystalline semiconductor region that covers the uneven surface of the crystalline semiconductor region having the uneven surface, the second conductivity type being opposite to the first conductivity type. In the photoelectric conversion device, a concentration gradient of an impurity element imparting the first conductivity type is formed from the first-conductivity-type crystalline semiconductor region toward the crystalline semiconductor region having the uneven surface.

Inventors: Yamazaki; Shunpei (Tokyo, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/00 (20060101)

Expiration Date: 2018-10-28 0:00:00