Patent Number: 8,871,560

Title: Plasma annealing of thin film solar cells

Abstract: Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma.

Inventors: Ahmed; Shafaat (Yorktown Heights, NY), Chey; Sukjay (New York, NY), Deligianni; Hariklia (Tenafly, NJ), Romankiw; Lubomyr T. (Briancliff Manor, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 31/032 (20060101); H01L 31/0749 (20120101)

Expiration Date: 2018-10-28 0:00:00