Patent Number: 8,871,585

Title: Manufacturing method of semiconductor device and semiconductor device

Abstract: A manufacturing method of a semiconductor device includes: forming a first gate insulating film on a semiconductor substrate in first and second regions in an active area; forming first gate electrodes on the first gate insulating film in the first and second regions; forming source/drain regions by introducing impurities at both sides of the first gate electrode in the first and second regions; performing heat treatment of activating the impurities; forming a stress liner film so as to cover the whole surface of first gate electrodes in the first and second regions; removing the stress liner film at an upper portion of the first gate electrode in the second region while allowing the stress liner film at least at a portion in the first region to remain to expose the upper portion of the first gate electrode in the second region; forming a groove by removing the first gate electrode in the second region; and forming a second gate electrode in the groove.

Inventors: Tsukamoto; Masanori (Kanagawa, JP)

Assignee: Sony Corporation

International Classification: H01L 31/072 (20120101)

Expiration Date: 2018-10-28 0:00:00