Patent Number: 8,871,600

Title: Schottky barrier diodes with a guard ring formed by selective epitaxy

Abstract: Schottky barrier diodes, methods for fabricating Schottky barrier diodes, and design structures for a Schottky barrier diode. A guard ring for a Schottky barrier diode is formed with a selective epitaxial growth process. The guard ring for the Schottky barrier diode and an extrinsic base of a vertical bipolar junction diode on a different device region than the Schottky barrier diode may be concurrently formed using the same selective epitaxial growth process.

Inventors: Harame; David L. (Essex Junction, VT), Liu; Qizhi (Lexington, MA), Rassel; Robert M. (Colchester, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/8222 (20060101)

Expiration Date: 2018-10-28 0:00:00