Patent Number: 8,871,601

Title: Diffusion barriers

Abstract: Embodiments of the present invention include diffusion barriers, methods for forming the barriers, and semiconductor devices utilizing the barriers. The diffusion barrier comprises a self-assembled monolayer (SAM) on a semiconductor substrate, where one surface of the SAM is disposed in contact with and covalently bonded to the semiconductor substrate, and one surface of the monolayer is disposed in contact with and covalently bonded to a metal layer. In some embodiments, the barrier comprises an assembly of one or more monomeric subunits of the following structure: Si--(C.sub.nH.sub.y)-(LM).sub.m where n is from 1 to 20, y is from 2n-2 to 2n, m is 1 to 3, L is a Group VI element, and M is a metal, such as copper. In some embodiments, (C.sub.nH.sub.y) can be branched, crosslinked, or cyclic.

Inventors: Zhang; Xuena (San Jose, CA), Lee; Mankoo (Fremont, CA), Pramanik; Dipankar (Saratoga, CA)

Assignee: Intermolecular, Inc.

International Classification: H01L 21/331 (20060101); H01L 21/44 (20060101)

Expiration Date: 2018-10-28 0:00:00