Patent Number: 8,871,608

Title: Method for fabricating backside-illuminated sensors

Abstract: A method for fabricating a backside-illuminated sensor includes providing a thin film semiconductor lamina having a first conductivity, and forming a doped region having a second conductivity within the lamina and at a front surface of the lamina. The lamina may be provided as a free-standing lamina, or may be provided as a semiconductor donor body from which the lamina is cleaved. An electrical connection is formed to the doped region. A temporary carrier is contacted to the back surface of the semiconductor and later removed. A backside-illuminated sensor is fabricated from the semiconductor lamina, in which the thickness of the semiconductor lamina remains substantially unchanged during the fabrication process.

Inventors: Murali; Venkatesan (San Jose, CA), Chari; Arvind (Saratoga, CA), Prabhu; Gopal (San Jose, CA), Petti; Christopher J. (Mountain View, CA)

Assignee: GTAT Corporation

International Classification: H01L 31/0232 (20140101)

Expiration Date: 2018-10-28 0:00:00