Patent Number: 8,871,615

Title: Method of manufacturing semiconductor device

Abstract: According to one embodiment, a method includes forming a first SiGe layer having a first profile of a concentration of Ge on a semiconductor substrate, forming a second SiGe layer having a second profile of a concentration of Ge on the first SiGe layer, the second profile lower than a first peak of the first profile, forming a mask layer on the second SiGe layer, etching the first and second SiGe layers by anisotropic etching using the mask layer as a mask to form trenches, selectively removing the first SiGe layer exposed into the trenches to form a cavity under the second SiGe layer, and oxidizing side and lower surfaces of the second SiGe layer exposed in the trenches and the cavity to increase the concentration of Ge in the second SiGe layer.

Inventors: Mori; Shinji (Yokkaichi, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 21/36 (20060101); H01L 21/20 (20060101)

Expiration Date: 2018-10-28 0:00:00