Patent Number: 8,871,650

Title: Post etch treatment (PET) of a low-K dielectric film

Abstract: Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si--O-containing protecting layer on the low-k dielectric layer. The Si--O-containing protecting layer is removed with a third plasma process.

Inventors: Nemani; Srinivas D. (Sunnyvale, CA), Bright; Nicolas J. (Malibu, CA), Lill; Thorsten B. (Santa Clara, CA), Zhou; Yifeng (Fremont, CA), Saephan; Jamie (Alameda, CA), Yieh; Ellie (San Jose, CA)

Assignee: Applied Materials, Inc.

International Classification: H01L 21/302 (20060101)

Expiration Date: 2018-10-28 0:00:00