Patent Number: 8,872,147

Title: Method for manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device

Abstract: A method for manufacturing a nonvolatile semiconductor storage device according to an embodiment includes laminating a first wire extending in a first direction, and a film made into a variable resistance element made of a metallic material, which are laminated in order on a semiconductor substrate, dividing, into a plurality of pieces, the film made into the variable resistance element, in the first direction and a second direction, forming an interlayer insulating film between the plurality of pieces formed by dividing the film made into the variable resistance element in the second direction, and oxidizing the metallic material of the film made into the variable resistance element, and laminating an upper electrode and a second wire extending in the second direction, which are laminated in order on the film made into the variable resistance element and the interlayer insulating film.

Inventors: Tanaka; Toshiharu (Yokkaichi, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 29/02 (20060101)

Expiration Date: 2018-10-28 0:00:00