Patent Number: 8,872,172

Title: Embedded source/drains with epitaxial oxide underlayer

Abstract: Semiconductor structures having embedded source/drains with oxide underlayers and methods for forming the same. Embodiments include semiconductor structures having a channel in a substrate, and a source/drain region adjacent to the channel including an embedded oxide region and an embedded semiconductor region located above the embedded oxide region. Embodiments further include methods of forming a transistor structure including forming a gate on a substrate, etching a source/drain recess in the substrate, filling a bottom portion of the source/drain recess with an oxide layer, and filling a portion of the source/drain recess not filled by the oxide layer with a semiconductor layer.

Inventors: Cheng; Kangguo (Schenectady, NY), Khakifirooz; Ali (Mountain View, CA), Reznicek; Alexander (Troy, NY), Sreenivasan; Raghavasimhan (Schenectady, NY), Adam; Thomas N. (Slingerlands, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 29/78 (20060101)

Expiration Date: 2018-10-28 0:00:00