Patent Number: 8,872,190

Title: Multi-finger HEMT layout providing improved third order intercept point and saturated output power performance

Abstract: A semiconductor device including a plurality of source pads, a plurality of drain fingers, a plurality of gate fingers, a drain combiner connected to the plurality of drain fingers, and a gate combiner connected to the plurality of gate fingers. The plurality of source pads generally comprises a pair of end source pads and one or more inner source pads. Each end source pad is configured to have added inductance. Each of the drain fingers is generally disposed between two of the plurality of source pads. Each of the gate fingers is generally disposed between a respective source pad and a respective drain finger.

Inventors: Young; Alan C. (Corlette, AU), Mahon; Simon J. (Avalon, AU)

Assignee: M/A-COM Technology Solutions Holdings, Inc.

International Classification: H01L 31/0312 (20060101)

Expiration Date: 2018-10-28 0:00:00