Patent Number: 8,872,210

Title: Semiconductor light emitting device

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation light.

Inventors: Furuyama; Hideto (Kanagawa-ken, JP), Akimoto; Yosuke (Kanagawa-ken, JP), Shimada; Miyoko (Kanagawa-ken, JP), Kojima; Akihiro (Kanagawa-ken, JP), Sugizaki; Yoshiaki (Tokyo, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 33/40 (20100101)

Expiration Date: 2018-10-28 0:00:00