Patent Number: 8,872,229

Title: Thin film transistor

Abstract: A thin film transistor includes a substrate and an active layer formed on the substrate. The active layer includes a channel region, a source region and a drain region. A source electrode and a drain electrode are formed on the source region and the drain region respectively. A gate insulating layer is formed between a gate electrode and the channel region. The thin film transistor further includes a nitride conductive layer formed between the drain electrode and the drain region, and between the source electrode and source region. The nitride conductive layer has a carrier concentration higher than that of the active layer, thereby reducing contacting resistances between the drain electrode and the drain region and between the source electrode and source region.

Inventors: Tsang; Jian-Shihn (New Taipei, TW)

Assignee: Hon Hai Precision Industry Co., Ltd.

International Classification: H01L 21/336 (20060101)

Expiration Date: 2018-10-28 0:00:00