Patent Number: 8,872,244

Title: Contact structure employing a self-aligned gate cap

Abstract: After formation of a replacement gate structure, a template dielectric layer employed to pattern the replacement gate structure is removed. After deposition of a dielectric liner, a first dielectric material layer is deposited by an anisotropic deposition and an isotropic etchback. A second dielectric material layer is deposited and planarized employing the first dielectric material portion as a stopping structure. The first dielectric material portion is removed selective to the second dielectric material layer, and is replaced with gate cap dielectric material portion including at least one dielectric material different from the materials of the dielectric material layers. A contact via hole extending to a source/drain region is formed employing the gate cap dielectric material portion as an etch stop structure. A contact via structure is spaced from the replacement gate structure at least by remaining portions of the gate cap dielectric material portion.

Inventors: He; Hong (Schenectady, NY), Tseng; Chiahsun (Wynantskill, NY), Yeh; Chun-chen (Clifton Park, NY), Yin; Yunpeng (Niskayuna, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 29/78 (20060101)

Expiration Date: 2018-10-28 0:00:00