Patent Number: 8,872,261

Title: Semiconductor device and manufacturing method of the same

Abstract: A semiconductor device includes first, second, and third semiconductor layers each having multiple diffusion layers. The first direction widths of the first diffusion layers are the same. The amount of impurity within the first diffusion layers gradually increases from the bottom end towards the top end of the first semiconductor layer. The first direction widths of the second diffusion layers are the same. The amounts of impurity within the second diffusion layers are the same. The first direction widths of the third diffusion layers are narrower than the first direction widths of the first diffusion layers and the first direction widths of the second diffusion layers at the same level, and gradually become narrower from the bottom end towards the top end of the third semiconductor layer. The amount of impurity within the third diffusion layers are the same.

Inventors: Irifune; Hiroyuki (Hyogo-ken, JP), Saito; Wataru (Kanagawa-ken, JP), Sumi; Yasuto (Hyogo-ken, JP), Kimura; Kiyoshi (Hyogo-ken, JP), Ohta; Hiroshi (Hyogo-ken, JP), Suzuki; Junji (Hyogo-ken, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 29/66 (20060101)

Expiration Date: 2018-10-28 0:00:00