Patent Number: 8,872,274

Title: Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain

Abstract: An upside-down p-FET is provided on a donor substrate. The upside-down p-FET includes: self-terminating e-SiGe source and drain regions; a cap of self-aligning silicide/germanide over the e-SiGe source and drain regions; a silicon channel region connecting the e-SiGe source and drain regions; buried oxide above the silicon channel region; and a gate controlling current flow from the e-SiGe source region to the e-SiGe drain region.

Inventors: Cohen; Guy M (Mohegan Lake, NY), Frank; David J (Yorktown Heights, NY), Lauer; Isaac (White Plains, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 29/66 (20060101)

Expiration Date: 2018-10-28 0:00:00