Patent Number: 8,872,281

Title: Silicided trench contact to buried conductive layer

Abstract: A trench contact silicide is formed on an inner wall of a contact trench that reaches to a buried conductive layer in a semiconductor substrate to reduce parasitic resistance of a reachthrough structure. The trench contact silicide is formed at the bottom, on the sidewalls of the trench, and on a portion of the top surface of the semiconductor substrate. The trench is subsequently filled with a middle-of-line (MOL) dielectric. A contact via may be formed on the trench contact silicide. The trench contact silicide may be formed through a single silicidation reaction with a metal layer or through multiple silicidation reactions with multiple metal layers.

Inventors: Coolbaugh; Douglas D. (Highland, NY), Johnson; Jeffrey B. (Essex Junction, VT), Lindgren; Peter J. (Essex Junction, VT), Lie; Xuefeng (South Burlington, VT), Nakos; James S. (Essex Junction, VT), Omer; Bradley A. (Fairfax, VT), Rassel; Robert M. (Colchester, VT), Sheridan; David C. (Starkville, MS)

Assignee: International Business Machines Corporation

International Classification: H01L 29/78 (20060101)

Expiration Date: 2018-10-28 0:00:00