Patent Number: 8,872,311

Title: Semiconductor device and a method of manufacture therefor

Abstract: The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device, in one particularly advantageous embodiment, includes a multi layer etch stop located over a substrate, wherein the multi layer etch stop has a first insulative layer and a second silicon-rich nitride layer located over the first insulative layer. Located over the multi layer etch stop is a dielectric layer having an opening formed therein that extends through at least a portion of the multi layer etch stop. A conductive plug is typically located within the opening, wherein an insulative spacer is located between the conductive plug and the second silicon-rich nitride layer.

Inventors: Rossi; Nace (Singapore, SG), Maury; Alvaro (Pulau Pinang, MY)

Assignee: Agere Systems Inc.

International Classification: H01L 23/58 (20060101)

Expiration Date: 2018-10-28 0:00:00