Patent Number: 8,876,973

Title: Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same

Abstract: There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

Inventors: Kato; Hiromitsu (Tsukuba, JP), Yamasaki; Satoshi (Tsukuba, JP), Ookushi; Hideyo (Tsukuba, JP), Shikata; Shinichi (Tsukuba, JP)

Assignee: National Institute of Advanced Industrial Science and Technology

International Classification: C30B 23/00 (20060101); C30B 28/12 (20060101); C30B 25/00 (20060101); C30B 28/14 (20060101); B32B 9/00 (20060101); C30B 29/04 (20060101); B01J 3/06 (20060101)

Expiration Date: 2019-11-04 0:00:00