Patent Number: 8,877,079

Title: Method and apparatus for manufacturing a semiconductor device

Abstract: The present invention relates to a method of manufacturing a semiconductor device wherein etching is performed on films on a wafer using a plasma treatment apparatus. In the manufacturing method according to the present invention, a change in the difference between the emission intensities of a first wavelength component and a second wavelength component in plasma is monitored during etching. If the amount of change in the difference per unit time exceeds a predetermined threshold a given number of times in a row, then the flow rate of oxygen introduced to the plasma treatment apparatus is increased or, if the amount of change exceeding the predetermined threshold has not been seen, then the oxygen flow rate is set back to the original value thereof. This series of actions is repeated all the time during a set period of time.

Inventors: Ueda; Yasuhiko (Tokyo, JP)

Assignee: PS4 Luxco S.a.r.l.

International Classification: G01R 31/00 (20060101); H01L 21/00 (20060101); H01L 21/302 (20060101)

Expiration Date: 2019-11-04 0:00:00