Patent Number: 8,877,291

Title: Method of manufacturing thin film which suppresses unnecessary scattering and deposition of a source material

Abstract: The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material before the start of the film formation. Used is a film forming apparatus including: an evaporation chamber 16; a film forming chamber 17 in which a substrate 21 is provided; an evaporation source 19 holding a film formation material 15 and including an opening surface 14; a moving mechanism 35 configured to cause the evaporation source 19 to move; and a conductance variable structure 34. The film forming chamber 17 and the evaporation chamber 16 are evacuated. In a state where the differential pressure between these chambers can be secured by the conductance variable structure 34, the nonreactive gas is introduced to the evaporation chamber 16 to adjust the pressure in the evaporation chamber 16 to predetermined pressure or more. Thus, the evaporation of the film formation material is suppressed. In the same state as above, the nonreactive gas is introduced to the film forming chamber 17 to adjust the pressure in the film forming chamber 17 to the predetermined pressure or more. The conductance variable structure 34 is activated to cancel the above state. Then, the evaporation source 19 is moved by the moving mechanism 35, so that the opening surface 14 is located close to the substrate 21. The pressure in each chamber is decreased to less than the predetermined pressure. Thus, the suppression of the evaporation of the film formation material is canceled, and the film formation is started.

Inventors: Honda; Kazuyoshi (Osaka, JP), Bessho; Kunihiko (Osaka, JP), Shimada; Takashi (Osaka, JP)

Assignee: Panasonic Corporation

International Classification: C23C 16/00 (20060101)

Expiration Date: 2019-11-04 0:00:00