Patent Number: 8,877,300

Title: Atomic layer deposition using radicals of gas mixture

Abstract: Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.

Inventors: Lee; Sang In (Sunnyvale, CA)

Assignee: Veeco ALD Inc.

International Classification: C23C 16/455 (20060101); C23C 16/50 (20060101)

Expiration Date: 2019-11-04 0:00:00