Patent Number: 8,877,539

Title: Method for producing a photovoltaic cell including the preparation of the surface of a crystalline silicon substrate

Abstract: A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.

Inventors: Moriceau; Hubert (Saint-Egreve, FR), Mur; Pierre (Crolles, FR), Ribeyron; Pierre-Jean (Saint Ismier, FR)

Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives

International Classification: H01L 31/18 (20060101)

Expiration Date: 2019-11-04 0:00:00