Patent Number: 8,877,579

Title: Methods of manufacturing semiconductor devices

Abstract: Methods of manufacturing semiconductor devices include providing a substrate including a NMOS region and a PMOS region, implanting fluorine ions into an upper surface of the substrate, forming a first gate electrode of the NMOS region and a second gate electrode of the PMOS region on the substrate, forming a source region and a drain region in portions of the substrate, which are adjacent to two lateral surfaces of the first gate electrode and the second gate electrode, respectively, and performing a high-pressure heat-treatment process on an upper surface of the substrate by using non-oxidizing gas.

Inventors: Song; Moon-kyun (Gyeonggi-do, KR), Lim; Ha-jin (Seoul, KR), Park; Moon-han (Gyeonggi-do, KR), Do; Jin-ho (Gyeonggi-do, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 21/336 (20060101); H01L 21/8238 (20060101)

Expiration Date: 2019-11-04 0:00:00